The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MJD200RLG
View detailed images (8)

MJD200RLG

SKU: MJD200RLG
MJD200RLG Transistor Silicon NPN CASE: TO252 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO252
Manufacturer Generic
Polarity NPN
Maximum Collector Power Dissipation (Pc) 12.5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 80 pF
Transition Frequency (ft): 65 MHz
Forward Current Transfer Ratio (hFE), MIN 45
SMD Transistor Code J200G
SKU 1436325
Back