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MJD210-1
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MJD210-1

SKU: MJD210-1
MJD210-1 Transistor Silicon PNP CASE: TO252 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer Motorola Semiconductor
Vbr CBO 40
Vbr CEO 24
Max. PD (W) 12
Derate (Amb) (W/°C) 100m
Max. hFE 180
Min hFE 45
Ic Max. (A) 5.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 65M
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 4-33
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 12.5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 80 pF
Transition Frequency (ft): 65 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 1268382
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