MJD253-1G
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MJD253-1G

SKU: MJD253-1G
MJD253-1G Transistor Silicon PNP CASE: TO251 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO251
Manufacturer Generic
Polarity PNP
Maximum Collector Power Dissipation (Pc) 12.5 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 50 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SMD Transistor Code J253G
SKU 1436331
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