MJD253

SKU: MJD253

MJD253 Transistor Silicon PNP CASE: TO252 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO252
Manufacturer	Generic
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	1.4
Derate (Amb) (W/°C)	11m
Max. hFE	180
Min hFE	40
Ic Max. (A)	4.0
@Ic (test) (A)	200m
Icbo Max. @Vcb Max. (A)	100n
Polarity	PNP
R(sat) (Û)	800m
Trans. Freq (Hz) Min.	40M
Oper. Temp (°C) Max.	150
@VCE (V)	1.0
Pinout Equivalence Number	4-118
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	12.5 W
Maximum Collector-Emitter Voltage \|Vce\|	100 V
Maximum Collector Current \|Ic max\|	4 A
Transition Frequency (ft):	40 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	254119

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