MJD2955
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MJD2955

SKU: MJD2955
MJD2955 Transistor Silicon PNP CASE: TO251 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO251
Manufacturer Generic
Vbr CBO 70
Vbr CEO 60
Max. PD (W) 20
Derate (Amb) (W/°C) 160m
Max. hFE 100
Min hFE 20
Ic Max. (A) 10
Icbo Max. @Vcb Max. (A) 2.0m
Polarity PNP
R(sat) (Û) 800m
Trans. Freq (Hz) Min. 2.0M
Oper. Temp (°C) Max. 140
@VCE (V) 70i
Pinout Equivalence Number 4-104
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 254120
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