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MJD31
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MJD31

SKU: MJD31
MJD31 Transistor Silicon NPN CASE: TO251 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO251
Manufacturer Generic
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 15
Max. hFE 50
Min hFE 10
Ic Max. (A) 3.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 50u
Polarity NPN
Derate Above 25°C 120m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 40
Pinout Equivalence Number 4-104
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 254124
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