MJD350-1

SKU: MJD350-1

MJD350-1 Transistor Silicon PNP CASE: TO252 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO252
Manufacturer	Motorola Semiconductor
Vbr CEO	300
Max. PD (W)	15
Derate (Amb) (W/°C)	120m
Max. hFE	240
Min hFE	30
Ic Max. (A)	500m
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	100u
Polarity	PNP
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	15 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	1267395

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