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MJD42C
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MJD42C

SKU: MJD42C
MJD42C Transistor Silicon PNP CASE: TO251AA MAKE: ON Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO251AA
Manufacturer ON Semiconductor
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 20
Derate (Amb) (W/°C) 14m
Max. hFE 75
Min hFE 15
Ic Max. (A) 6.0
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
R(sat) (Û) 250m
Trans. Freq (Hz) Min. 3.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 4-104
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 6 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 18432
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