Weight |
0.01 kg
|
Case |
TO252 |
Equivalent |
MJD44H11-SMD |
Type |
Transistor Silicon NPN |
Manufacturer |
ON Semiconductor |
Vbr CEO |
80 |
Max. PD (W) |
20 |
t(f) Max. (S) |
140n- |
Min hFE |
40 |
Ic Max. (A) |
8.0 |
@Ic (test) (A) |
4.0 |
Icbo Max. @Vcb Max. (A) |
10u |
Polarity |
NPN |
Tr Max. (s) |
300n- |
R(sat) (Û) |
125m |
Derate Above 25°C |
160m |
Trans. Freq (Hz) Min. |
50M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
80 |
Pinout Equivalence Number |
4-104 |
Surface Mounted Yes/No |
YES |
Maximum Collector Power Dissipation (Pc) |
20 W |
Maximum Collector-Base Voltage |Vcb| |
80 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
8 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
130 pF |
Transition Frequency (ft): |
50 MHz |
Forward Current Transfer Ratio (hFE), MIN |
30 |
SKU |
254131 |