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MJD45H11-1
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MJD45H11-1

SKU: MJD45H11-1
MJD45H11-1 Transistor Silicon PNP CASE: TO252 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer Motorola Semiconductor
Vbr CEO 80
Max. PD (W) 20
t(f) Max. (S) 100n-
Min hFE 40
Ic Max. (A) 8.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 10u
Polarity PNP
Derate Above 25°C 160m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 150
@VCE (V) 1.0
Pinout Equivalence Number 4-104
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 230 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 1273202
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