MJD50

SKU: MJD50

MJD50 Transistor Silicon NPN CASE: SOT428 MAKE: ON Semiconductor

Datasheet

MJD50 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT428
Manufacturer	ON Semiconductor
Vbr CBO	500
Vbr CEO	400
Max. PD (W)	15
t(f) Max. (S)	2.0u-+
Max. hFE	150
Min hFE	30
Ic Max. (A)	1.0
@Ic (test) (A)	300m
Icbo Max. @Vcb Max. (A)	200u
Polarity	NPN
Tr Max. (s)	200n-
Derate Above 25°C	120m
Trans. Freq (Hz) Min.	10M
Oper. Temp (°C) Max.	140
@VCE (V)	300
Pinout Equivalence Number	4-104
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	15 W
Maximum Collector-Base Voltage \|Vcb\|	500 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	359109

Back