MJD6039-1

MJD6039-1

SKU: MJD6039-1
MJD6039-1 Transistor Silicon NPN CASE: TO252 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO252
Manufacturer Generic
Vbr CEO 80
Max. PD (W) 20
Max. hFE 12k
Min hFE 1.0k
Ic Max. (A) 4.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 10u
Mat. Silicon Logic
Polarity NPN
Derate Above 25°C 160m
Trans. Freq (Hz) Min. 25M
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-35
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 100 pF
Forward Current Transfer Ratio (hFE), MIN 1000
SKU 1277512
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