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MJE1101
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MJE1101

SKU: MJE1101
MJE1101 Transistor Silicon NPN CASE: TO127 MAKE: Motorola Semiconductor
Datasheet
MJE1101 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO127
Manufacturer Motorola Semiconductor
Vbr CEO 60
Max. PD (W) 70
Min hFE 750
Ic Max. (A) 5.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 200m
Mat. Silicon Logic
Polarity NPN
R(sat) (Û) 700m
Derate Above 25°C 560m
Trans. Freq (Hz) Min. 1.0M
@VCE (test) 3.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-35
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 70 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 750
SKU 254146
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