The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MJE13006

MJE13006

SKU: MJE13006
MJE13006 Transistor Silicon NPN CASE: TO220 MAKE: NTE Electronics
Price:
£7.19 Inc. VAT (£5.99 Ex. VAT)
£7.19 Inc. VAT (£5.99 Ex. VAT)
Qty
  • 6 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer NTE Electronics
Vbr CEO 300
Max. PD (W) 2.0
t(f) Max. (S) 700n
Max. hFE 60
Min hFE 8.0
Ic Max. (A) 8.0
@Ic (test) (A) 2.0
Icbo Max. @Vcb Max. (A) 1.0m
Polarity NPN
Tr Max. (s) 1.0u
R(sat) (Û) 500m
Derate Above 25°C 800m
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 140
@VCE (V) 5.0
Pinout Equivalence Number 3-15
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 80 W
Maximum Collector-Base Voltage |Vcb| 600 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 9 V
Maximum Collector Current |Ic max| 8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 110 pF
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 8
SKU 20335
Back