Weight |
0.01 kg
|
Case |
TO220 |
Type |
Transistor Silicon NPN |
Manufacturer |
ON Semiconductor |
Vbr CEO |
400 |
Max. PD (W) |
2.0 |
t(f) Max. (S) |
700n |
Max. hFE |
60 |
Min hFE |
8.0 |
Ic Max. (A) |
8.0 |
@Ic (test) (A) |
2.0 |
Icbo Max. @Vcb Max. (A) |
1.0m |
Polarity |
NPN |
Tr Max. (s) |
1.0u |
R(sat) (Û) |
500m |
Derate Above 25°C |
16m |
Trans. Freq (Hz) Min. |
4.0M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
5.0 |
Pinout Equivalence Number |
4-33 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
80 W |
Maximum Collector-Base Voltage |Vcb| |
700 V |
Maximum Collector-Emitter Voltage |Vce| |
400 V |
Maximum Emitter-Base Voltage |Veb| |
9 V |
Maximum Collector Current |Ic max| |
8 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
110 pF |
Transition Frequency (ft): |
4 MHz |
Forward Current Transfer Ratio (hFE), MIN |
8 |
SKU |
20390 |