MJE2010

SKU: MJE2010

MJE2010 Transistor Silicon PNP CASE: TO126 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO126
Manufacturer	Motorola Semiconductor
Vbr CBO	40
Vbr CEO	40
Max. PD (W)	80
Derate (Amb) (W/°C)	640m
Max. hFE	125
Min hFE	25
Ic Max. (A)	5.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	400u
Polarity	PNP
Trans. Freq (Hz) Min.	3.0M
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	5 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	3 MHz
Forward Current Transfer Ratio (hFE), MIN	25
SKU	254157

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