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MJE2360T
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MJE2360T

SKU: MJE2360T
MJE2360T Transistor Silicon NPN CASE: TO220 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Generic
Vbr CBO 375
Vbr CEO 350
Max. PD (W) 30
Max. hFE 200
Min hFE 25
Ic Max. (A) 500m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
R(sat) (Û) 15
Derate Above 25°C 240m
Trans. Freq (Hz) Min. 10M
Oper. Temp (°C) Max. 140
@VCE (V) 10
Pinout Equivalence Number 4-33
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 30 W
Maximum Collector-Base Voltage |Vcb| 375 V
Maximum Collector-Emitter Voltage |Vce| 350 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 40 pF
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 664311
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