Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Motorola Semiconductor |
Case |
TO126 |
Vbr CBO |
375 |
Vbr CEO |
350 |
Max. PD (W) |
30 |
Max. hFE |
250 |
Min hFE |
50 |
Ic Max. (A) |
500m |
@Ic (test) (A) |
50m |
Icbo Max. @Vcb Max. (A) |
100u |
Polarity |
NPN |
Derate Above 25°C |
240m |
Trans. Freq (Hz) Min. |
10M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
10 |
Pinout Equivalence Number |
3-15 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
30 W |
Maximum Collector-Base Voltage |Vcb| |
375 V |
Maximum Collector-Emitter Voltage |Vce| |
350 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
0.5 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
5 MHz |
Forward Current Transfer Ratio (hFE), MIN |
50 |
SKU |
254186 |