The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MJE254
View detailed images (13)

MJE254

SKU: MJE254
MJE254 Transistor Silicon PNP CASE: TO126 MAKE: Motorola Semiconductor
Datasheet
MJE254 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO126
Manufacturer Motorola Semiconductor
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 1.5
Derate (Amb) (W/°C) 12m
Min hFE 25
Ic Max. (A) 4.0
@Ic (test) (A) 200m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
R(sat) (Û) 600m
Trans. Freq (Hz) Min. 40M
Oper. Temp (°C) Max. 140
@VCE (V) 1.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 15 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 70 pF
Transition Frequency (ft): 40 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 116841
Back