The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MJE2801T
View detailed images (12)

MJE2801T

SKU: MJE2801T
MJE2801T Transistor Silicon NPN CASE: TO220 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer Generic
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 75
Max. hFE 100
Min hFE 25
Ic Max. (A) 10
@Ic (test) (A) 3.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 600m
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 4-118
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 25
SKU 664304
Back