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MJE3055T
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MJE3055T

SKU: MJE3055T
MJE3055T is a silicon epitaxial-base NPN power transistor in a JEDEC TO-220 package. Suited for power switching circuits and general-purpose amplifiers, its key ratings are VCEO 60 V, IC 10 A, total power dissipation 75 W and maximum junction temperature 150 °C.
Price:
£9.59 Inc. VAT (£7.99 Ex. VAT)
£9.59 Inc. VAT (£7.99 Ex. VAT)
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Datasheet
MJE3055T Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO220
Manufacturer ST Microelectronics - STM
Vbr CBO 70
Vbr CEO 60
Max. PD (W) 75
Max. hFE 100
Min hFE 20
Ic Max. (A) 10
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 10m
Polarity NPN
R(sat) (Û) 800m
Derate Above 25°C 600m
Trans. Freq (Hz) Min. 2.0M
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 4-118
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 75 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 20286
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