Weight |
0.01 kg
|
Manufacturer |
ST Microelectronics - STM |
Case |
TO126 |
Type |
Transistor Silicon NPN |
Vbr CEO |
300 |
Max. PD (W) |
20 |
Max. hFE |
240 |
Min hFE |
30 |
Ic Max. (A) |
500m |
@Ic (test) (A) |
50m |
Icbo Max. @Vcb Max. (A) |
100u |
Polarity |
NPN |
Derate Above 25°C |
167m |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
10 |
Pinout Equivalence Number |
3-10 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
20 W |
Maximum Collector-Base Voltage |Vcb| |
300 V |
Maximum Collector-Emitter Voltage |Vce| |
300 V |
Maximum Emitter-Base Voltage |Veb| |
3 V |
Maximum Collector Current |Ic max| |
0.5 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
10 MHz |
Forward Current Transfer Ratio (hFE), MIN |
30 |
SKU |
16862 |