| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Manufacturer |
ST Microelectronics - STM |
| Case |
TO126 |
| Vbr CEO |
300 |
| Max. PD (W) |
20 |
| Max. hFE |
240 |
| Min hFE |
30 |
| Ic Max. (A) |
500m |
| @Ic (test) (A) |
50m |
| Icbo Max. @Vcb Max. (A) |
100u |
| Polarity |
NPN |
| Derate Above 25°C |
167m |
| Oper. Temp (°C) Max. |
140 |
| @VCE (V) |
10 |
| Pinout Equivalence Number |
3-10 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
20 W |
| Maximum Collector-Base Voltage |Vcb| |
300 V |
| Maximum Collector-Emitter Voltage |Vce| |
300 V |
| Maximum Emitter-Base Voltage |Veb| |
3 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
10 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
30 |
| SKU |
16862 |