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MJE4350
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MJE4350

SKU: MJE4350
MJE4350 Transistor Silicon PNP CASE: TO3P MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO3P
Manufacturer Motorola Semiconductor
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 125
Derate (Amb) (W/°C) 1.0
Max. hFE 35-
Min hFE 15
Ic Max. (A) 16
@Ic (test) (A) 8.0
Icbo Max. @Vcb Max. (A) 750u
Polarity PNP
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 4-33
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 16 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 800 pF
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 554223
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