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MJE5191J
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MJE5191J

SKU: MJE5191J
MJE5191J Transistor Silicon NPN CASE: TO126 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO126
Manufacturer Generic
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 40
Max. hFE 250
Min hFE 25
Ic Max. (A) 4.0
@Ic (test) (A) 1.5
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 320m
Trans. Freq (Hz) Min. 2.0M
Oper. Temp (°C) Max. 140
@VCE (V) 2.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 60 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 664266
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