| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO247 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CEO |
650 |
| Max. PD (W) |
150 |
| Max. hFE |
10 |
| Min hFE |
4.0 |
| Ic Max. (A) |
10 |
| @Ic (test) (A) |
10 |
| Polarity |
NPN |
| Pinout Equivalence Number |
3-15 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
150 W |
| Maximum Collector-Base Voltage |Vcb| |
1500 V |
| Maximum Collector-Emitter Voltage |Vce| |
650 V |
| Maximum Emitter-Base Voltage |Veb| |
8 V |
| Maximum Collector Current |Ic max| |
10 A |
| Max. Operating Junction Temperature (Tj) |
125 °C |
| Collector Capacitance (Cc) |
350 pF |
| Transition Frequency (ft): |
2.5 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
4 |
| SKU |
20720 |