| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO39 |
| Manufacturer |
Motorola Semiconductor |
| t(Acc) Max. (S) |
1.0u |
| Vbr CBO |
350 |
| Vbr CEO |
325 |
| Max. PD (W) |
800m |
| C(ob) (F) |
12p |
| Derate (Amb) (W/°C) |
5.3m |
| hfe |
25 |
| Ic Max. (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
100u |
| Bits Per Word |
4 |
| Polarity |
NPN |
| PD Max. (W) |
420m |
| Tech. |
PMOS Integrated Circuit |
| Trans. Freq (Hz) Min. |
150M |
| @VCE (test) (V) |
20 |
| Oper. Temp (°C) Min |
-55 |
| Oper. Temp (°C) Max. |
125 |
| Number of Words |
256 |
| @Ic (A) |
10m |
| Number of Chip Selects |
1 |
| Pinout Equivalence Number |
16-304 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.8 W |
| Maximum Collector-Base Voltage |Vcb| |
350 V |
| Maximum Collector-Emitter Voltage |Vce| |
325 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Collector Capacitance (Cc) |
12 pF |
| Transition Frequency (ft): |
15 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
25 |
| SKU |
85112 |