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MMBA812M6
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MMBA812M6

SKU: MMBA812M6
MMBA812M6 Transistor Silicon PNP CASE: SOT23 MAKE: Samsung
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Samsung
Vbr CBO 50
Vbr CEO 40
Max. PD (W) 225m
Derate (Amb) (W/°C) 1.8m
hfe 200
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code M6
SKU 1247968
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