MMBC1009F2

SKU: MMBC1009F2

MMBC1009F2 Transistor Silicon NPN CASE: SOT23 MAKE: Samsung

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	Samsung
Vbr CBO	50
Vbr CEO	25
Max. PD (W)	350m
C(ob) (F)	2p
Derate (Amb) (W/°C)	2.8m
hfe	40
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	150M
@VCE (test) (V)	3
Oper. Temp (°C) Max.	150
@Ic (A)	500u
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	2 pF
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SMD Transistor Code	F2
SKU	663325

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