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MMBC1009F3
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MMBC1009F3

SKU: MMBC1009F3
MMBC1009F3 Transistor Silicon NPN CASE: SOT23 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Samsung
Vbr CBO 50
Vbr CEO 25
Max. PD (W) 225m
C(ob) (F) 2.0p
Derate (Amb) (W/°C) 1.8m
hfe 60
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 3.0
Oper. Temp (°C) Max. 150
@Ic (A) 500u
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code F3
SKU 663324
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