MMBC1622D7

SKU: MMBC1622D7

MMBC1622D7 Transistor Silicon NPN CASE: SOT23 MAKE: Samsung

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	Samsung
Vbr CBO	40
Vbr CEO	35
Max. PD (W)	225m
Derate (Amb) (W/°C)	1.8m
hfe	300
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	50n
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	3.0
Oper. Temp (°C) Max.	150
@Ic (A)	500u
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	300
SMD Transistor Code	D7
SKU	1250248

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