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MMBC1622D8
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MMBC1622D8

SKU: MMBC1622D8
MMBC1622D8 Transistor Silicon NPN CASE: SOT23 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Samsung
Vbr CBO 40
Vbr CEO 35
Max. PD (W) 350m
Derate (Amb) (W/°C) 2.8m
hfe 400
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 100M
@VCE (test) (V) 3
Oper. Temp (°C) Max. 150
@Ic (A) 500u
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 450
SMD Transistor Code D8
SKU 1250278
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