The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MMBC1623L7
View detailed images (5)

MMBC1623L7

SKU: MMBC1623L7
MMBC1623L7 Transistor Silicon NPN CASE: SOT23 MAKE: Samsung
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Samsung
Vbr CBO 50
Vbr CEO 40
Max. PD (W) 225m
Derate (Amb) (W/°C) 1.8m
hfe 300
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SMD Transistor Code L7
SKU 1250492
Back