MMBT200

SKU: MMBT200

MMBT200 Transistor Silicon PNP CASE: SOT23 MAKE: National Semiconductor - NSC

Product specifications

Weight	0.01 kg
Equivalent	MMBT200A
Type	Transistor Silicon PNP
Case	SOT23
Manufacturer	National Semiconductor - NSC
Vbr CBO	60
Vbr CEO	45
Max. PD (W)	350m
C(ob) (F)	6.0p
hfe	80
Icbo Max. @Vcb Max. (A)	50n
Polarity	PNP
Trans. Freq (Hz) Min.	250M
@VCE (test) (V)	1.0
@Ic (A)	100u
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.35 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	45 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	6 pF
Transition Frequency (ft):	250 MHz
Forward Current Transfer Ratio (hFE), MIN	80
SMD Transistor Code	N2
SKU	555529

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