| Weight |
0.01 kg
|
| Equivalent |
MMBT2905 |
| Type |
Transistor Silicon PNP |
| Case |
TO236 |
| Manufacturer |
National Semiconductor - NSC |
| Vbr CBO |
60 |
| Vbr CEO |
40 |
| Max. PD (W) |
350m |
| C(ob) (F) |
8.0p |
| hfe |
50 |
| Icbo Max. @Vcb Max. (A) |
10n |
| Polarity |
PNP |
| t(stor) Max. (S) |
100n+ |
| Trans. Freq (Hz) Min. |
200M |
| @VCE (test) (V) |
10 |
| @Ic (A) |
500m |
| Pinout Equivalence Number |
3-17 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.6 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.6 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Collector Capacitance (Cc) |
8 pF |
| Transition Frequency (ft): |
200 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
100 |
| SKU |
1279410 |