The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MMBT2907
View detailed images (1)

MMBT2907

SKU: MMBT2907
MMBT2907 Transistor Silicon PNP CASE: TO236 MAKE: Fairchild Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO236
Manufacturer Fairchild Semiconductor
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 225m
C(ob) (F) 8.0p
t(on) Delay (S) 10n
Derate (Amb) (W/°C) 1.8m
t(f) Max. (S) 30n
hfe 30
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 20n
Polarity PNP
Tr Max. (s) 40n
t(stor) Max. (S) 80n
Trans. Freq (Hz) Min. 200M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 500m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.4 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code 2B
SKU 256384
Back