MMBT3639

MMBT3639

SKU: MMBT3639
MMBT3639 Transistor Silicon PNP CASE: SOT23 MAKE: National Semiconductor - NSC
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer National Semiconductor - NSC
Vbr CBO 6.0
Vbr CEO 6.0
Max. PD (W) 350m
C(ob) (F) 5.5p
hfe 30
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
t(stor) Max. (S) 60n+
Trans. Freq (Hz) Min. 300M
@VCE (test) (V) 0.3
@Ic (A) 10m
Pinout Equivalence Number 3-17
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 6 V
Maximum Collector-Emitter Voltage |Vce| 6 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.08 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 3.5 pF
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 555619
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