MMBT4356

SKU: MMBT4356

MMBT4356 Transistor Silicon PNP CASE: SOT23 MAKE: National Semiconductor - NSC

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	SOT23
Manufacturer	National Semiconductor - NSC
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	350m
C(ob) (F)	30p
hfe	30
Icbo Max. @Vcb Max. (A)	50n
Polarity	PNP
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	10
@Ic (A)	500m
Pinout Equivalence Number	3-17
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.35 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.6 A
Max. Operating Junction Temperature (Tj)	125 °C
Collector Capacitance (Cc)	30 pF
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	555644

Back