The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MMBT4889
View detailed images (5)

MMBT4889

SKU: MMBT4889
MMBT4889 Transistor Silicon PNP CASE: SOT23 MAKE: National Semiconductor - NSC
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer National Semiconductor - NSC
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 350m
C(ob) (F) 4.0p
hfe 60
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
Trans. Freq (Hz) Min. 40M
@VCE (test) (V) 10
@Ic (A) 100u
Pinout Equivalence Number 3-17
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 160 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 555650
Back