MMBT5089

MMBT5089

SKU: MMBT5089
MMBT5089 Transistor Silicon NPN CASE: TO236 MAKE: Motorola Semiconductor
Datasheet
MMBT5089 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO236
Manufacturer Motorola Semiconductor
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 225m
Derate (Amb) (W/°C) 1.8m
hfe 450
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 50M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 1.0m
Pinout Equivalence Number 3-14
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN 400
SMD Transistor Code 1R
SKU 359310
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