| Weight |
0.01 kg
|
| Equivalent |
MMBT5551-SMD |
| Type |
Transistor Silicon NPN |
| Case |
SOT23 |
| Manufacturer |
Fairchild Semiconductor |
| Vbr CBO |
160 |
| Vbr CEO |
140 |
| Max. PD (W) |
225m |
| Derate (Amb) (W/°C) |
1.8m |
| hfe |
80 |
| Ic Max. (A) |
600m |
| Icbo Max. @Vcb Max. (A) |
50n |
| Polarity |
NPN |
| @VCE (test) (V) |
5.0 |
| Oper. Temp (°C) Max. |
150 |
| @Ic (A) |
10m |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
YES |
| Maximum Collector Power Dissipation (Pc) |
0.2 W |
| Maximum Collector-Base Voltage |Vcb| |
180 V |
| Maximum Collector-Emitter Voltage |Vce| |
160 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.6 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
10 pF |
| Transition Frequency (ft): |
100 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
80 |
| SMD Transistor Code |
3S_G1_K4N |
| SKU |
433579 |