MMBTH10LT1G
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MMBTH10LT1G

SKU: MMBTH10LT1G
MMBTH10LT1G Transistor Silicon NPN CASE: SOT23 MAKE: ON Semiconductor
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer ON Semiconductor
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.225 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.004 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 0.7 pF
Transition Frequency (ft): 650 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code 3EM.
SKU 514396
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