MMJT350T1G
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MMJT350T1G

SKU: MMJT350T1G
MMJT350T1G Transistor Silicon PNP CASE: SOT223 MAKE: Generic
Product specifications
Equivalent MMJT350T1
Type Transistor Silicon PNP
Case SOT223
Manufacturer Generic
Polarity PNP
Maximum Collector Power Dissipation (Pc) 2.75 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code T350
SKU 1436902
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