| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO100 |
| Manufacturer |
GEC Plessey Semiconductors |
| Ckts Per Dev. |
1 |
| Noise Rej. Max. |
1.0 |
| Polarity |
NPN |
| PD Max. (W) |
12m |
| tPD Max. (S) |
500n |
| Nom. Supp Volt |
-20 |
| Tech. |
MOSPEC Semiconductor |
| Oper. Temp (°C) Min |
-55 |
| Oper. Temp (°C) Max. |
125 |
| Pinout Equivalence Number |
10-166 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.1 W |
| Maximum Collector-Base Voltage |Vcb| |
10 V |
| Maximum Collector-Emitter Voltage |Vce| |
10 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
100 °C |
| Collector Capacitance (Cc) |
150 pF |
| Transition Frequency (ft): |
1 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
15 |
| SKU |
1001185 |