| Weight |
0.05 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO66 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CBO |
120 |
| Vbr CEO |
60 |
| Ckts Per Dev. |
2 |
| Max. PD (W) |
5.0 |
| Min hFE |
40 |
| Ic Max. (A) |
1.2 |
| @Ic (test) (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
5.0u |
| @Temp. (test) (°C) |
50 |
| Noise Rej. Max. |
1.0 |
| VRRM |
400 |
| Polarity |
NPN |
| PD Max. (W) |
12m |
| tPD Max. (S) |
500n |
| Nom. Supp Volt |
-24 |
| R(sat) (Û) |
600m |
| 1-Cycle Surge Current (A) |
200 |
| Tech. |
MOSPEC Semiconductor |
| @Temp. (test) for Vf) |
25 |
| Derate Above 25°C |
222m |
| Vf Max. |
1.2 |
| Ir @25°C |
10u |
| I(out) (If AVG) Max. |
10 |
| Trans. Freq (Hz) Min. |
100M |
| @If (test) |
5.0 |
| Oper. Temp (°C) Min |
-55 |
| Oper. Temp (°C) Max. |
125 |
| @VCE (V) |
5.0 |
| Pinout Equivalence Number |
N/A |
| No. of Pins |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
5 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
1.2 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Transition Frequency (ft): |
100 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
552942 |