| Weight |
0.01 kg
|
| Equivalent |
MP110 |
| Type |
Transistor Germanium PNP |
| Case |
TO3 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CBO |
90 |
| Vbr CEO |
40 |
| Max. PD (W) |
106 |
| Max. hFE |
300 |
| Min hFE |
65 |
| Ic Max. (A) |
25 |
| @Ic (test) (A) |
1.0 |
| Icbo Max. @Vcb Max. (A) |
200u |
| f(oper) Max. (Hz) |
11M |
| Polarity |
PNP |
| Nom. Supp Volt |
5.0 |
| R(sat) (Û) |
100m |
| Tech. |
Bipolar Semiconductor |
| Derate Above 25°C |
1.2 |
| Trans. Freq (Hz) Min. |
500k |
| Oper. Temp (°C) Min |
0 |
| Oper. Temp (°C) Max. |
125 |
| @VCE (V) |
2.0 |
| Clear (Y/N) |
No |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
106 W |
| Maximum Collector-Base Voltage |Vcb| |
90 V |
| Maximum Collector-Emitter Voltage |Vce| |
40 V |
| Maximum Emitter-Base Voltage |Veb| |
20 V |
| Maximum Collector Current |Ic max| |
25 A |
| Max. Operating Junction Temperature (Tj) |
110 °C |
| Transition Frequency (ft): |
0.5 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
65 |
| SKU |
553589 |