| Weight |
0.01 kg
|
| Type |
Transistor Germanium PNP |
| Case |
DIP20 |
| Manufacturer |
GPD |
| Vbr CBO |
30 |
| Vbr CEO |
20 |
| Max. PD (W) |
63 |
| Max. hFE |
100 |
| Min hFE |
50 |
| Ic Max. (A) |
3.0 |
| @Ic (test) (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
2.0m |
| Bits Per Word |
4 |
| Output Config |
3-State |
| Polarity |
PNP |
| PD Max. (W) |
1.0 |
| t(acc) Max. (S) |
450n |
| R(sat) (Û) |
250m |
| Tech. |
NMOS Integrated Circuit |
| Derate Above 25°C |
833m |
| tW Min (S) |
450n |
| Trans. Freq (Hz) Min. |
12k |
| Oper. Temp (°C) Min |
0 |
| Oper. Temp (°C) Max. |
100 |
| Number of Words |
1k |
| @VCE (V) |
2.0 |
| Pinout Equivalence Number |
20-66 |
| Descript |
Multiplexed I/O |
| No. of Pins |
20 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
70 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
15 V |
| Maximum Collector Current |Ic max| |
3 A |
| Max. Operating Junction Temperature (Tj) |
110 °C |
| Transition Frequency (ft): |
0.12 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
50 |
| SKU |
662683 |