The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
MP4279

MP4279

SKU: MP4279
MP4279 Transistor Germanium PNP CASE: TO3 MAKE: Toshiba
Product specifications
Type Transistor Germanium PNP
Case TO3
Manufacturer Toshiba
Vbr CBO 45
Vbr CEO 30
Max. PD (W) 170
t(f) Max. (S) 80u
Max. hFE 240
Min hFE 80
Ic Max. (A) 60
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 4.0m
Polarity PNP
Tr Max. (s) 20u
R(sat) (Û) 10m
Derate Above 25°C 2.0
Trans. Freq (Hz) Min. 2.0k
Oper. Temp (°C) Max. 125
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 170 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 25 V
Maximum Collector Current |Ic max| 60 A
Max. Operating Junction Temperature (Tj) 110 °C
Transition Frequency (ft): 0.24 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SKU 1267063
Back