| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
DIP28 |
| Manufacturer |
Motorola Semiconductor |
| Mem. Addr Rnge |
8k |
| No.of Addr. Modes |
13 |
| Vbr CBO |
30 |
| Vbr CEO |
20 |
| Max. PD (W) |
310m |
| C(ob) (F) |
2.5p |
| Derate (Amb) (W/°C) |
2.8m |
| hfe |
25 |
| No. of I/O Lines |
13 |
| I/O Line Types |
Byte |
| Max. Inst. Len (bits) |
24 |
| Min Inst. Len (bits) |
8 |
| Ic Max. (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
50n |
| fClk Max. (Hz) |
1.0M |
| Polarity |
NPN |
| Nom. Supp Volt |
5.0 |
| Tech. |
NMOS Integrated Circuit |
| Trans. Freq (Hz) Min. |
700M |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Min |
0 |
| Oper. Temp (°C) Max. |
135 |
| @Ic (A) |
2.0m |
| Pinout Equivalence Number |
28-272 |
| No. of Pins |
28 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.31 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Collector-Emitter Voltage |Vce| |
20 V |
| Maximum Emitter-Base Voltage |Veb| |
3 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
135 °C |
| Collector Capacitance (Cc) |
2.5 pF |
| Transition Frequency (ft): |
700 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
25 |
| SKU |
385412 |