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MPS835
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MPS835

SKU: MPS835
MPS835 Transistor Silicon NPN CASE: TO92 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO92
Manufacturer Generic
Vbr CBO 25
Vbr CEO 20
Max. PD (W) 350m
C(ob) (F) 4.0p
Derate (Amb) (W/°C) 2.8m
t(f) Max. (S) 35n+
hfe 3.0
Ic Max. (A) 200m
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
Tr Max. (s) 20n
t(stor) Max. (S) 35n
Trans. Freq (Hz) Min. 300M
@VCE (test) (V) 15
Oper. Temp (°C) Max. 150
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.35 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 3 V
Max. Operating Junction Temperature (Tj) 135 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 662336
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