| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO92 |
| Manufacturer |
NTE Electronics |
| Vbr CBO |
60 |
| Vbr CEO |
60 |
| Max. PD (W) |
750m |
| Derate (Amb) (W/°C) |
5.0m |
| Ic Max. (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
100n |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
100M |
| Oper. Temp (°C) Max. |
150 |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.33 W |
| Maximum Collector-Base Voltage |Vcb| |
60 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
100 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
50 |
| SKU |
16743 |